The Influence of the Preheating Temperature of the (−2 0 1) β-Ga2O3 Substrates on c-Plane GaN Epitaxial Growth

In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using atmospheric pressure metalorganic chemical vapor deposition method. The results show that high-temperature preheating (>500 °C) can modify surface morphology so crystalline quality grown layer be improved. With higher temperatures, reveals smaller FWHM (full width at half-maximum) X-ray rocking curve. addition, find photoluminescence spectra layers reveal their narrowest linewidth temperature 800 °C. These support improvements and provide optimization c-GaN epitaxially substrates for further device fabrication.